s m d ty p e w w w . ke x in . com . c n 1 m osfe t n-cha nne l mo s f e t si4 4 1 0 dy ( k i 4 4 1 0 d y ) feat ur es v d s ( v ) = 30v i d = 10 a ( v g s = 10v ) r d s ( o n ) 13.5m ( v g s = 10v ) r d s ( o n ) 20m ( v g s = 4.5v ) sop -8 0.21 +0.04 -0.02 1.50 0.15 1 source 2 source 3 source 4 gate 5 drain 6 drain 7 drain 8 drain d g s a bs olut e max imum r at ings ta = 25 s y m bol rati ng uni t v d s 30 v g s 20 t a = 25 10 t a = 70 8 i d m 50 t a = 25 2.5 t a = 70 1.6 r t h ja 50 r t h jc 22 t j 150 t st g - 55 to 150 j unc ti on t em per atur e s tor age t em per atur e range p d w p ow er di s s i pati on /w t her m al res i s tanc e.j unc ti on- to- a m bi ent ( note.1) t her m al res i s tanc e.j unc ti on- to- cas e v a p ul s ed dr ai n cur r ent p ar am eter conti nuous dr ai n cur r ent ( note.1) i d dr ai n- s our c e v ol tage g ate- s our c e v ol tage note.1:s ur fac e m ounted on f r4 b oar d, t 10 s ec .
s m d ty p e w w w . k exi n . co m . c n 2 m osf e t n-cha nne l mo s f e t si4 4 1 0 dy ( k i 4 4 1 0 d y ) e lec t r ic al c har ac t er is t ic s ta = 25 p ar am eter s y m bol t es t condi ti ons m i n t y p m ax uni t dr ai n- s our c e b r eak dow n v ol tage v d s s i d = 250 a , v g s = 0v 30 v v d s = 30v , v g s = 0v 1 v d s = 30v , v g s = 0v , t j = 55 25 g ate- b ody leak age cur r ent i g s s v d s = 0v , v g s = 20v 100 na g ate t hr es hol d v ol tage v g s ( t h ) v d s = v g s , i d = 250 a 1 3 v v g s = 10v , i d = 10a ( note.1) 13.5 v g s = 4.5v , i d = 5a ( note.1) 20 o n s tate dr ai n cur r ent i d ( o n ) v g s = 5v , v d s = 10v ( note.1) 20 a f or w ar d t r ans c onduc tan c e g fs v d s = 15v , i d = 5a ( note.1) 38 s g ate res i s tanc e r g v g s = 0v , v d s = 0v , f= 1m hz 0.5 2.6 g ate char ge q g v d s = 15 v , v g s = 5 v , i d = 10 a 20 34 t otal g ate char ge q g t 37 60 g ate s our c e char ge q g s 7 g ate dr ai n char ge q g d 7 t ur n- o n del ay t i m e t d ( o n ) 30 t ur n- o n ri s e t i m e t r 20 t ur n- o ff del ay t i m e t d ( o f f ) 100 t ur n- o ff f al l t i m e t f 80 b ody di ode rev er s e rec ov er y t i m e t r r i f = 2.3a , d i /d t = 100a / s 80 m ax i m um b ody - di ode conti nuou s cur r ent i s 2.3 a di ode f or w ar d v ol tage v s d i s = 2.3a ,v g s = 0v ( note.1) 1.1 v nc ns z er o g ate v ol tage dr ai n cur r ent i d s s ua m v g s = 10v , v d s = 25v ,i d = 1a r l = 25 ,r g e n = 6 r d s ( o n ) s tati c dr ai n- s our c e o n- res i s tanc e v g s = 10v , v d s = 15v , i d = 10a note.1: p ul s e tes t; pul s e w i dth 300us , duty c y c l e 2% . m a r k i n g 4 410 k c * * * * m a r k i n g
s m d ty p e w w w . k e x i n . c o m . c n 3 m osf e t n-cha nne l mo s f e t si4 4 1 0 dy ( k i 4 4 1 0 d y ) ty pic al c har ac t er is it ic s 0 500 1000 1500 2000 2500 3000 0 6 12 18 24 30 0 10 20 30 40 50 0 2 4 6 8 10 0 2 4 6 8 10 0 8 16 24 32 40 0.0 0.5 1.0 1.5 2.0 - 50 - 25 0 25 50 75 100 125 150 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0 10 20 30 40 50 0 10 20 30 40 50 0 1 2 3 4 5 outpu t s c i t s i r e t c a r a h c r e f s n a r t s c i t s i r e t c a r a h c gate charg e on-resistance vs. drain curren t v d s - drain-to-source v oltage (v ) - drain current (a ) i d v g s = 10 v thru 4 v 3 v v g s - gate-to-source v oltage (v ) - drain current (a ) i d t c = 12 5 c 25 c - 55 c - gate-to-source v oltage (v ) q g - t o t al g a t e charge (nc ) v d s - drain-to-source v oltage (v ) c - capacitance (pf ) v gs c rs s c o s s c i s s v d s = 15 v i d = 10 a i d - drain current (a ) capacitance on-resistance vs. junction t emperature v g s = 10 v i d = 10 a t j - junction t emperature ( c) v g s = 4.5 v v g s = 10 v r d s ( on ) - on-resistance ( r d s ( on ) - on-resistance ( (normalized)
s m d ty p e w w w . k exi n . co m . c n 4 m osfe t . n-cha nne l mo s f e t si4 4 1 0 dy ( k i 4 4 1 0 d y ) ty pic al c har ac t er is it ic s 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.00 0.02 0.04 0.06 0.08 0.10 0 2 4 6 8 10 0 20 40 60 80 0.01 0.10 1.00 10.00 on-resistanc e vs. gate-to-source v oltage threshold v oltage single pulse powe r n o rma li ze d th erma l t ra n s i e n t i m p e d a n ce , j un ct ion -t o -am bi e n t squar e w ave pulse duration (sec ) 2 1 0.1 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 10 normalized e f fective t ransient thermal impedanc e 30 - on-resistance ( r ds(on) ) v g s - gate-to-source v oltage (v ) t j - t emperature ( ) c e s ( e m i t ) c p owe r (w ) - 1.0 - 0.8 - 0.6 - 0.4 - 0.2 - 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 i d = 10 a i d = 25 0 a v arian c e ( v ) v gs(th) 0.2 0.1 0.05 0.02 s ingle p uls e duty cycle = 0. 5 1. duty cycle, d = 2. per unit base = r t h j a = 50 c/w 3. t j m - t a = p d m z t h j a ( t ) t 1 t 2 t 1 t 2 notes: 4. surface mounted p d m source-drai n diode forward v oltage v s d - source-to-drain v oltage (v ) - source current (a ) i s 40 t j = 2 5 c t j = 15 0 c
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